발간년도 : [2022]
| 논문정보 |
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| 논문명(한글) |
[Vol.17, No.1] Measurements of Relative Permittivity and Loss Tangent of Silicon Wafer |
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| 논문투고자 |
Won-Hui Lee |
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| 논문내용 |
The operating frequency of designed circuits on silicon wafers is expanding from the microwave band to the millimeter wave band. When a circuit is constructed using a silicon wafer, the operating frequency and high-frequency harmonics must be considered. Therefore, it is possible to accurately design a circuit that it is necessary to know exactly the relative permittivity and loss tangent of silicon wafers. In this paper, the relative permittivity and loss tangent of a silicon waver were measured using a cylindrical cavity resonator. In the case of a silicon wafer, it is easily broken, so it is impossible to measure it using the conventional the relative permittivity and loss tangent measurement methods. However, when measured by the method of this paper, it is possible to measure after breaking a silicon wafer and inserting it into a cylindrical cavity resonator, so it is easy to measure. The relative permittivity and loss tangent of the silicon wafer on the simulator were measured by selecting the mode with the largest change in the resonance frequency. This is results in the case of inserting the silicon wafer into the cylindrical cavity resonator and in the case of empty. As a results of the measurement, in the case of the silicon wafer doped with AS, the relative permittivity was high at 16.5 and the loss tangent was high as 0.5. In the case of a silicon wafer with a resistivity of 19, the relative permittivity was 12 and the loss tangent was 0.1. |
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